Amorphous BCN powders were prepared by mechanical milling with hexagonal boron nitride and graphite as starting material. A bulk amorphous BCN compound was produced by sintering the asmilled amorphous BCN powders in a vacuum of 10-5 Torr at a temperature of 1470 K. The conductivity measurement for the bulk amorphous BCN cmpound showed that it behaves as a semiconductor with band gap energy of 0.11 eV for temperatures ranging from room temperature to 560 K and a semimetal for temperatures between 560 and 740 K.