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N-掺杂石墨烯薄膜的超电容性质研究 |
Flexible Crumpled Nitrogen-doped Graphene Films as High Performance Supercapacitor Electrodes |
投稿时间:2015-04-15 |
DOI:10.16018/j.cnki.cn32-1650/n.201503001 |
中文关键词: 褶皱石墨烯 韧性薄膜 电容特性 |
英文关键词: crumpled graphene flexible films supercapacity properties |
基金项目:江苏省自然科学基金(BK20140473) |
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中文摘要: |
采用自组装/源位还原法相结合制备了自支撑褶皱N-掺杂石墨烯薄膜。运用场发射扫描电镜、X射线粉末衍射和光电子能谱仪等表征手段对所制备的韧性薄膜进行了表征。电化学性能测试表明所制备的N-掺杂石墨烯薄膜具有良好的超电容特性:在1 A/g的电流密度下,其比容量为210 F/g;当电流密度增加10倍时,仍然具有初始容量的71.0%。在5 A/g的电流密度下循环1 000次后比容量值为原来的95.3%。 |
英文摘要: |
A method which combining self-assembly and source reduction has been used for the preparation of self supporting fold N - doped graphene films. Characterization methods such as field emission scanning electron microscope, X ray powder diffraction and photoelectron spectrometer have been used to characterize the preparation of the flexible films. Electrochemical performance tests show that the prepared N- doped graphene thin films have good properties of ultra - capacitance. At the current density of 1 A/g, its specific capacity is 210 F/g. When the current density is increased by 10 times, it still have 71. 0% of the initial capacity. In 5 A / g current density of 1 000 cycles, specific capacity value is 95. 3% of the original. |
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