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| 热处理对富碳氢化非晶碳化硅薄膜阻氢性能的影响 |
| On the Behavior of Hydrogen in C-rich a-SiC: H Films with Thermal Treatment |
| 投稿时间：2016-02-24 |
| DOI：10.16018/j.cnki.cn32-1650/n.201602009 |
| 中文关键词: 热稳定 氢扩散 a-SiC:H薄膜 氢 |
| 英文关键词: thermal stability hydrogen diffusion a-SiC:H films hydrogen |
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| 中文摘要: |
| 针对热处理对a-SiC:H薄膜的氢扩散和热稳定性的影响，利用二次离子质谱(SIMS)和傅立叶红外谱(FTIR)来分析氢的深度分布和薄膜中SiHn和CHn的变化。结果表明，在473 K到773 K范围内，经过热处理的a-SiC:H薄膜能够有效地延缓氢扩散，从而提高阻氢性能，但是在热稳定方面有所退化。 |
| 英文摘要: |
| Aim at the effect of annealing on the diffusion and thermal stability of hydrogen in a-SiC: H films, SIMS and FTIR were used to obtain the hydrogen depth profile and compositional change of SiHn and CHn. The results showed that the annealed samples can retard hydrogen diffusion and improve their hydrogen resistance at 300 K~773 K with the thermal stability of hydrogen degraded. |
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