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| 退火处理对低阻LCD屏ITO薄膜光电性能的影响 |
| Effect of Annealing Treatment on Photoelectric Performance of ITO Film for Low‐resistance LCD Screen |
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| DOI：10.16018/j.cnki.cn32-1650/n.202401013 |
| 中文关键词: ITO薄膜 退火温度 退火时间 光电性能 |
| 英文关键词: ITO thin film annealing temperatures annealing time photoelectric performance |
| 基金项目: |
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| 摘要点击次数: 38 |
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| 中文摘要: |
| 采用磁控溅射法制备氧化铟锡(ITO)薄膜，对制备好的ITO薄膜样品进行不同温度、不同时间的退火处理。用WGT-S透过率雾度仪、四探针测试仪测量退火后的电阻屏ITO薄膜光电性能参数，并采用扫描电子显微镜观测退火前后薄膜的表面状态，分析退火处理对电阻屏ITO薄膜光电性能的影响。研究结果表明: 制备的ITO薄膜的最佳退火温度为400 ℃，退火时间约为70 min。 |
| 英文摘要: |
| ITO thin film was prepared by magnetron sputtering method. The prepared ITO film samples were annealed at different temperatures and time. The photoelectric properties of ITO film on resistance screen after annealing were measured by WGT-S transmittance haze meter and four-probe tester, and the surface state of ITO film before and after annealing was observed by scanning electron microscope, and the influence of annealing on the photoelectric properties of ITO film on resistance screen was analyzed. The research results indicate that the optimal annealing temperature for the prepared ITO film is 400 ℃, and the annealing time is about 70 minutes. |
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